document number: 94661 for technical questions, contact: diodes-tech@vishay.com www.vishay.com revision: 01-apr-09 1 high performance schottky generation 5.0, 18 a 18TT045-F vishay high power products features ? 175 c high performance schottky diode ? very low forward voltage drop ? extremely low reverse leakage ? optimized v f vs. i r trade off for high efficiency ? increased ruggedness for reverse avalanche capability ? rbsoa available ? negligible switching losses ? submicron trench technology ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level applications ? high efficiency smps ? automotive ? high frequency switching ? output rectification ? reverse battery protection ? freewheeling ? dc/dc systems ? increased power density systems product summary i f(av) 18 a v r 45 v v f at 18 a at 125 c 0.51 v anode 1 2 3 cathode to-220ac base cathode major ratings and characteristics symbol characteristics values units v rrm 45 v v f 18 a pk , t j = 125 c (typical) 0.48 t j range - 55 to 175 c voltage ratings parameter symbol test conditions 18TT045-F units maximum dc reverse voltage v r t j = 25 c 45 v absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 157 c, rectangular waveform 18 a maximum peak one cycle non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1800 10 ms sine or 6 ms rect. pulse 390 non-repetitive avalanche energy e as t j = 25 c, i as = 5.5 a, l = 3.7 mh 56 mj repetitive avalanche current i ar limited by frequency of operation and time pulse duration so that t j < t j max. i as at t j max. as a function of time pulse. see fig. 8 i as at t j max. a
www.vishay.com for technical questions, contact: diodes-tech@vishay.com document number: 94661 2 revision: 01-apr-09 18TT045-F vishay high power products high performance schottky generation 5.0, 18 a note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1) 18 a t j = 25 c 0.553 0.58 v 36 a 0.644 0.69 18 a t j = 125 c 0.478 0.51 36 a 0.608 0.65 reverse leakage current i rm (1) t j = 25 c v r = rated v r 2.4 150 a t j = 125 c 2.6 12 ma junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 1350 - pf series inductance l s measured lead to lead 5 mm from package body 8.0 - nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.50 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac 18tt045
document number: 94661 for technical questions, contact: diodes-tech@vishay.com www.vishay.com revision: 01-apr-09 3 18TT045-F high performance schottky generation 5.0, 18 a vishay high power products fig. 1 - maximum forward voltage drop characteristic s fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction c apacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 100 10 1 0 0.2 0.4 0.6 0. 8 1.0 i f - instantaneous forward current (a) v fm - forward volta g e drop (v) t j = 25 c t j = 125 c t j = 175 c 0 5 10 15 20 25 30 35 40 45 i r - reverse current (ma) v r - reverse volta g e (v) 0.0001 0.001 0.01 0.1 1 10 100 175 c 150 c 125 c 100 c 75 c 50 c 25 c 10 000 1000 100 0 5 10 15 20 25 30 35 40 45 c t - junction capacitance (pf) v r - reverse volta g e (v) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectan g ular pulse duration (s) thermal impedance z thjc (c/w) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 single p u lse (thermal resistance)
www.vishay.com for technical questions, contact: diodes-tech@vishay.com document number: 94661 4 revision: 01-apr-09 18TT045-F vishay high power products high performance schottky generation 5.0, 18 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 0 5 10 15 20 25 30 allowable case temperature (c) i f(av) - avera g e forward current (a) 120 150 140 130 160 170 1 8 0 dc see note (1) s qu are w a v e (d = 0.50) 8 0 % rated v r applied 0 5 10 15 20 25 30 avera g e power loss (w) i f(av) - avera g e forward current (a) 0 3 9 6 12 15 1 8 0 120 90 60 30 dc rms limit t p - square wave pulse duration (s) i fsm - non-repetitive sur g e current (a) 10 100 1000 10 000 100 1000 10 000
document number: 94661 for technical questions, contact: diodes-tech@vishay.com www.vishay.com revision: 01-apr-09 5 18TT045-F high performance schottky generation 5.0, 18 a vishay high power products fig. 8 - reverse bias safe operating area (a valanche current vs. rectangular pulse duration) fig. 9 - reverse bias safe operating area (a valanche energy vs. rectangular pulse duration) 110 100 1 10 100 1000 rectan g ular pulse duration (s) avalanche current (a) t j = 25 c t j = 175 c t j = 125 c 1 10 100 1 10 100 rectan g ular pulse duration (s) avalanche ener g y (mj) t j = 25 c t j = 125 c t j = 175 c
www.vishay.com for technical questions, contact: diodes-tech@vishay.com document number: 94661 6 revision: 01-apr-09 18TT045-F vishay high power products high performance schottky generation 5.0, 18 a ordering information table 1 - current rating (18 a) 2 - package: t = to-220 3 - t = trench 4 - voltage code ( 045 = 45 a) 5 - f = rohs compliant and totally lead (pb)-free tube standard pack quantity: 50 pieces device code 13 24 5 18 t t 045 - f links to related documents dimensions www.vishay.com/doc?95221 part marking information www.vishay.com/doc?95068
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
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